型号:

DMN2041LSD-13

RoHS:无铅 / 符合
制造商:Diodes Inc描述:MOSFET 2N-CH 20V 7.63A SO8
详细参数
数值
产品分类 分离式半导体产品 >> FET - 阵列
DMN2041LSD-13 PDF
标准包装 1
系列 -
FET 型 2 个 N 沟道(双)
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 20V
电流 - 连续漏极(Id) @ 25° C 7.63A
开态Rds(最大)@ Id, Vgs @ 25° C 28 毫欧 @ 6A,4.5V
Id 时的 Vgs(th)(最大) 1.2V @ 250µA
闸电荷(Qg) @ Vgs 15.6nC @ 10V
输入电容 (Ciss) @ Vds 550pF @ 10V
功率 - 最大 1.16W
安装类型 表面贴装
封装/外壳 8-SOIC(0.154",3.90mm 宽)
供应商设备封装 8-SO
包装 标准包装
其它名称 DMN2041LSD-13DIDKR
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